MT40A512M16LY-062E:E | Micron 8Gb DDR4 SDRAM | 3200MT/s High-Speed Memory

Product Overview

     The MT40A512M16LY-062E:E is an 8Gb (512M × 16) DDR4 SDRAM from Micron, supporting high-speed operation up to 3200MT/s (DDR4-3200). Built on Micron’s advanced DDR4 technology, it delivers high bandwidth, improved power efficiency, and stable timing characteristics, making it suitable for datacenters, networking hardware, industrial systems, and high-performance embedded computing.

     Operating at the standard DDR4 voltage of 1.2V, it offers reduced power consumption compared to DDR3, while enhancing throughput and long-term reliability for mission-critical applications.

Key Features

• 8Gb (512M × 16) DDR4 SDRAM
• Up to 3200MT/s data rate
• Operates at 1.2V, standard DDR4 voltage
• Higher bandwidth and lower power than DDR3
• Strong signal integrity and stable low-latency operation
• ECC-compatible depending on system implementation
• Compact FBGA package (LY series) for dense PCB layouts
• Suitable for servers, industrial computers, networking, and embedded devices

Application Fields

• Datacenter servers and cloud computing
• Networking equipment (routers, switches, firewalls)
• Industrial control systems (PLC, HMI, IPC)
• AIoT edge computing devices
• Medical electronics and instrumentation
• High-performance embedded systems
• Storage controllers, telecom base stations, smart surveillance systems

Key Specifications

Request for Quotation

To request pricing for MT40A512M16LY-062E:E—including availability, lead time, MOQ, lot details, datasheet, or recommended alternatives—please submit an RFQ.

Supports spot supply, shortage sourcing, BOM kitting, and long-term project fulfillment.