K4F6E3S4HM-THCLT2V

6Gb high-performance, low-power LPDDR4 DRAM for mobile, automotive, and embedded applications.

Product Description

Product Overview

K4F6E3S4HM-THCLT2V is a 6Gb LPDDR4 DRAM from Samsung Semiconductor, designed for high bandwidth and energy efficiency. Operating at just 1.1V and supporting speeds up to 3733 Mbps, it offers low latency and low power consumption. Its compact 200-ball FBGA package ensures thermal stability and signal integrity, making it ideal for smartphones, automotive systems, AI terminals, and industrial embedded platforms.

Key Features

JEDEC-compliant LPDDR4 standard
Supports up to 3733 Mbps data rate (LPDDR4-3733)
Operates at 1.1V ± 0.06V for low power consumption
Dual 16-bit channel architecture for higher throughput
Supports CA training and timing calibration
Auto-refresh, deep power-down, and low-power modes
Compact 200-ball FBGA package for strong signal reliability
Designed for mobile, automotive, and embedded industrial applications

Applications

Smartphones and tablets
Automotive infotainment and cluster systems
Industrial automation and IoT controllers
AI computing and edge intelligence devices
Consumer electronics and wearables

Technical Specifications

Parameter	Value
Density	6 Gb (768M × 8)
Data Rate	3733 Mbps
VDDQ	1.1V ± 0.06V
Channels	2 × 16-bit
Package	200-Ball FBGA
Dimension	10 × 10 × 0.8 mm
Temp Range	-40°C ~ +95°C
Functions	CA Training, Auto Refresh
Interface	LPDDR4
Power Efficiency	Deep Sleep / Self Refresh

Request for Quotation

For real-time stock, pricing, and delivery information of K4F6E3S4HM-THCLT2V, please include your Quantity (Qty), Required Lead Time, and Target Price in your RFQ. Our team will promptly provide the best quotation and support for BOM kitting, spot supply, and inventory management.