M321R8GA0EB2-CWM | Samsung 8Gb LPDDR5 DRAM | High-Speed Low-Power Mobile Memory

Product Overview

     The M321R8GA0EB2-CWM is an 8Gb LPDDR5 mobile DRAM from Samsung, delivering speeds up to 6400Mbps. Compared to LPDDR4X, LPDDR5 provides significantly higher bandwidth, reduced latency, and lower power consumption, making it ideal for advanced mobile platforms, AI inference workloads, camera imaging pipelines, and multimedia processing.

     As part of Samsung’s newest LPDDR5 generation, this device ensures superior efficiency and stability across high-performance, battery-sensitive, and embedded AI/IoT applications.

Key Features

• Samsung next-generation LPDDR5 DRAM
• 8Gb (1GB) density
• Up to 6400Mbps data rate
• Ultra-low-power architecture with DVS & deep sleep modes
• Improved bandwidth and reduced latency vs. LPDDR4X
• Suitable for AI processing, imaging, 5G applications
• High-reliability compact FBGA package
• Compatible with major mobile and AIoT SoCs

Application Fields

• 5G smartphones and mobile devices
• AIoT edge-computing systems
• High-performance camera ISP and vision modules
• AR/VR wearable devices
• Industrial embedded platforms
• Automotive IVI / ADAS subsystems
• High-bandwidth multimedia SoCs

Key Specifications

Request for Quotation

To request pricing for M321R8GA0EB2-CWM—including availability, lead time, MOQ, lot details, datasheet, or cross recommendations—please submit an RFQ.

We support spot supply, shortage sourcing, BOM kitting, and long-term production supply.