K4RAH086VB-MCWE

16Gb DDR5 ×8 high-performance DRAM for servers, AI inference systems, and next-generation data center platforms.

Product Description

Product Overview

K4RAH086VB-MCWE is a 16Gb DDR5 SDRAM from Samsung, built on a 2G × 8 organization and fully compliant with JEDEC DDR5 standards. Operating at 1.1V, it offers higher bandwidth, better latency, and improved efficiency over DDR4. With an integrated PMIC and on-die ECC, it enhances reliability and power stability — making it ideal for servers, AI accelerators, data centers, and industrial computing platforms.

Key Features

JEDEC-compliant DDR5 SDRAM
Supports 5600 Mbps (DDR5-5600)
Operates at 1.1V ± 0.05V for improved energy efficiency
Integrated PMIC for local power management
On-die ECC for advanced error correction
Dual 32-bit channel architecture for higher throughput
Wide temperature capability for industrial and server environments
Compact 96-ball FBGA for stable mounting and signal quality

Applications

Data center servers
AI inference and deep learning accelerators
High-performance computing (HPC)
Networking and telecom infrastructure
Industrial embedded computing

Technical Specifications

Parameter	Value
Density	16 Gb (2G × 8)
Data Rate	5600 Mbps
VDD	1.1V ± 0.05V
Error Correction	On-die ECC
PMIC	Integrated PMIC
Package	96-Ball FBGA
Dimension	9 × 8 × 1.2 mm
Architecture	8 Bank × 2 × 32-bit
Temp Range	-40°C ~ +95°C
Power Mode	Auto-refresh / Deep Sleep
Interface	POD_11

Request for Quotation

For real-time stock, pricing, and lead time for K4RAH086VB-MCWE, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our procurement team will reply promptly with optimized pricing, BOM kitting support, spot supply options, and inventory programs.