High-speed, high-power GaN Switch + PA modules integrating GaN-on-SiC technology for wideband radar, communication, and test systems. Offering peak power above 200 W and fast switching time below 50 ns.
Product Overview
JARON GaN Switch + Power Amplifier modules combine high-efficiency GaN amplification with fast solid-state switching, providing compact, rugged solutions for T/R modules and high-frequency pulse applications. Using GaN-on-SiC transistors ensures low insertion loss, high breakdown voltage, and superior heat dissipation.
Applications
Model |
Frequency Range (GHz) |
S21 (dB) |
Psat (dBm) |
PAE |
Idd（A） |
Powergain (dB) |
Isolation (dBc) |
Vd (V) |
Working mode |
Encapsulation |
GXSP1001G |
7~13 |
36 |
35.4 |
40 |
0.3 |
23.2 |
- |
28 |
CW&Pulse |
die&package |
GXSP1002G |
8~12 |
32 |
38 |
40 |
0.65 |
24 |
27 |
28 |
Pulse |
die&package |
GXSP1003G |
14~18 |
31 |
35 |
33 |
0.37 |
22 |
- |
24 |
CW&Pulse |
die&package |
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