High-efficiency, high-power-density GaN Power Transistors optimized for broadband radar, communication, and microwave applications. Delivering up to 500 W output power with 55% PAE under +28 V supply.
Product Overview
JARON GaN Power Transistors adopt advanced GaN-on-SiC technology, enabling high breakdown voltage, thermal stability, and linear efficiency. The devices cover 0.8–7.4 GHz, providing superior broadband gain and high power output. Suitable for CW and pulsed operation, these transistors offer outstanding thermal reliability for harsh environmental systems.
Applications
Model |
Frequency Range (GHz) |
Gain (dB) |
Output Power (W) |
PAE (%) |
Power supply voltage (V) |
Package or Product Dimensions (mm) |
GXPT4008 |
0.8~2 |
30 |
31 |
40 |
+28 |
28.00x20.00x1.75 |
GXPT4001 |
2.3~3.5 |
- |
160 |
50 |
+28 |
23.60x15.40x2.20 |
GXPT4009 |
2.7~3.1 |
13 |
500 |
54 |
+28 |
24.00x17.40x5.00 |
GXPT4010 |
2.7~3.5 |
13 |
400 |
55 |
+48 |
24.00x17.40x5.00 |
GXPT4011 |
2.7~3.5 |
28 |
180 |
55 |
+28 |
25.00x14.00x2.00 |
GXPT4012 |
3.1~3.4 |
28 |
60 |
55 |
+28 |
24.50x17.40x4.70 |
GXPT4002 |
5.3~5.9 |
- |
50 |
50 |
+28 |
8.00x8.00x1.60 |
GXPT4013 |
5.3~5.9 |
11 |
100 |
45 |
+28 |
24.00x17.40x5.00 |
GXPT4003 |
5.3~5.9 |
- |
100 |
50 |
+28 |
24.00x17.40x5.00 |
GXPT4004 |
5.3~5.9 |
- |
200 |
50 |
+28 |
24.00x17.40x5.00 |
GXPT4014 |
5.9~6.7 |
10 |
15 |
48 |
+28 |
21.00x12.90x4.50 |
GXPT4015 |
5.9~6.7 |
11 |
30 |
45 |
+28 |
21.00x12.90x4.50 |
GXPT4016 |
5.9~6.7 |
11 |
120 |
40 |
+28 |
24.00x17.40x5.00 |
GXPT4017 |
6.4~7.2 |
11 |
100 |
40 |
+28 |
24.00x17.40x5.00 |
GXPT4018 |
6.9~7.4 |
11 |
30 |
44 |
+28 |
24.00x17.40x5.00 |
GXPT4019 |
6.9~7.4 |
9 |
100 |
35 |
+28 |
24.00x17.40x5.00 |
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