K4RAH086VB-BCWM000

16Gb high-performance DDR5 ×8 SDRAM for servers, AI inference systems, and HPC applications.

Product Description

Product Overview

K4RAH086VB-BCWM000 is a 16Gb DDR5 SDRAM from Samsung Semiconductor, organized as 2G × 8 and fully compliant with JEDEC DDR5 standards.Operating at 1.1V, it supports speeds up to 5600 Mbps, delivering significant improvements in bandwidth, latency, and energy efficiency compared to DDR4.

With an integrated PMIC and on-die ECC, the device provides superior power stability and data integrity, making it ideal for servers, AI accelerators, networking systems, edge computing, and industrial-grade platforms.

Key Features

JEDEC-compliant DDR5 SDRAM
Supports up to 5600 Mbps data rate (DDR5-5600)
Operates at 1.1V ± 0.05V for higher energy efficiency
Integrated PMIC for enhanced power management
On-die ECC for improved error correction and data reliability
Dual-channel 32-bit architecture
Low-power modes including deep power-down and auto-refresh
96-ball FBGA package optimized for high-performance systems

Applications

Data center servers
AI inference and deep learning accelerators
High-performance computing (HPC)
Networking and communication hardware
Industrial automation and embedded control systems

Technical Specifications

Parameter	Value
Density	16 Gb (2G × 8)
Data Rate	5600 Mbps
VDD	1.1V ± 0.05V
Error Correction	On-die ECC
PMIC	Built-in
Package	96-Ball FBGA
Dimension	9 × 8 × 1.2 mm
Architecture	8 Bank × 2 × 32-bit
Temp Range	-40°C ~ +95°C
Power Mode	Auto-refresh / Deep Sleep
Interface	POD_11

Request for Quotation

For real-time stock, pricing, and delivery details of K4RAH086VB-BCWM000, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our team will respond with the best quotation and support for BOM kitting, spot supply, and inventory management.