HMC327MS8GETR | RF Power Amplifier MMIC 3–4 GHz | GaAs InGaP RF Amp

Product Overview

     The HMC327MS8GETR is a high-efficiency RF power amplifier MMIC designed for operation in the 3 GHz to 4 GHz frequency band. Built using GaAs InGaP heterojunction bipolar transistor (HBT) technology, the device delivers high gain and high output power with minimal external components. It operates from a single +5 V supply and offers power-down capability to reduce current consumption when not in use. Its compact 8-lead MSOP-EP surface-mount package with exposed paddle improves RF and thermal performance, making it ideal for wireless local loop, WLAN, fixed wireless access, and other RF power applications.

Key Features

• Frequency range: 3 GHz to 4 GHz RF power amplifier
• GaAs InGaP HBT MMIC technology
• High RF gain (~21 dB)
• Saturated output power up to +30 dBm
• Power-down control for reduced idle current
• Single supply: +5 V operation
• Compact 8-lead MSOP-EP surface-mount package
• Exposed paddle for improved RF grounding and thermal performance
• Minimal external components required
• RoHS compliant

Applications

• Wireless Local Loop (WLL) and broadband wireless access
• WLAN and point-to-multipoint radios
• Fixed wireless and backhaul communication systems
• RF power front end for transmit chains
• Microwave transceivers and test modules
• High-performance RF systems requiring compact amplifiers

Electrical Characteristics