16Gb high-speed, low-power LPDDR4X DRAM for mobile, automotive, and embedded applications.
Product Overview
K4UBE3D4AB-MGCL is a high-density 16Gb LPDDR4X DRAM from Samsung Semiconductor, organized as 2G × 8, compliant with JEDEC LPDDR4X standards. It supports speeds up to 4266 Mbps while operating at 1.1V, offering superior energy efficiency and bandwidth. Featuring a compact 200-ball FBGA package, it ensures excellent signal integrity and thermal stability, ideal for smartphones, automotive infotainment systems, AI controllers, and industrial IoT applications.
Key Features
Applications
Technical Specifications
| Parameter | Value |
| Density | 16 Gb (2G × 8) |
| Data Rate | 4266 Mbps |
| VDDQ | 1.1V ± 0.06V |
| Channels | 2 × 16-bit |
| Package | 200-Ball FBGA |
| Dimension | 10 × 10 × 0.8 mm |
| Temp Range | -40°C ~ +95°C |
| Functions | CA Training, Auto Refresh |
| Interface | LPDDR4X |
| Power Efficiency | Deep Sleep / Self Refresh |
Request for Quotation
For real-time stock, pricing, and delivery information of K4UBE3D4AB-MGCL, please include your Quantity (Qty), Required Lead Time, and Target Price in your RFQ. Our team will promptly offer the best quotation and support for BOM kitting, spot supply, and inventory management.