JARON GaN Driver Amplifiers are designed for high-linearity, high-efficiency driver stages in broadband radar and communication systems. Featuring output power up to +38 dBm and gain exceeding 20 dB, these amplifiers ensure stable performance from L to X band.
Product Overview
The JARON GaN Driver Amplifier series utilizes GaN-on-SiC technology, offering excellent thermal performance and robust linearity. It serves as an ideal pre-driver or intermediate stage in high-power amplifier chains, combining high efficiency and compact packaging for space-constrained designs.
Applications
Model |
Frequency Range (GHz) |
S21 (dB) |
Psat (dBm) |
Power gain (dB) |
PAE |
Vd (V) |
Idd (A) |
Working mode |
Package |
GXDR1001G |
6~18 |
10 |
26.5 |
- |
0.118 |
9 |
28 |
CW&Pulse |
Die |
GXDR1002G |
7~13 |
13 |
25 |
22 |
0.05 |
10 |
28 |
CW&Pulse |
Die |
GXDR1003G |
14~18 |
22.3 |
28.8 |
20 |
0.09 |
19 |
40 |
CW&Pulse |
Die |
GXDR1004G |
14~18 |
15 |
30.2 |
24 |
0.11 |
20 |
40 |
CW&Pulse |
Die |
EN
