K4F8E3S4HD-MGCL0JP | Samsung LPDDR4X 8Gb Memory Chip | High-Speed, Low-Power Mobile and Embedded Memory

K4F8E3S4HD- MGCL0JP

8Gb high-speed, low-power LPDDR4X DRAM optimized for mobile and embedded applications.

Product Description

Product Overview

K4F8E3S4HD-MGCL0JP is an 8Gb LPDDR4X DRAM from Samsung Semiconductor, designed for high bandwidth and ultra-low power operation. Fully compliant with JEDEC LPDDR4X standards, it supports data rates up to 4266 Mbps while operating at only 1.1V. With its compact 200-ball FBGA package, the chip ensures excellent thermal efficiency and signal stability, making it ideal for smartphones, automotive systems, AI controllers, and industrial IoT applications.

Key Features

JEDEC-compliant LPDDR4X standard
Supports data rates up to 4266 Mbps per pin
Operates at low voltage 1.1V ± 0.06V for reduced power consumption
Dual 16-bit channels for higher system bandwidth
Includes CA training and latency calibration features
Auto-refresh and deep power-down modes for energy efficiency
Compact 200-ball FBGA package for space-constrained designs
Ideal for mobile, automotive, and industrial applications

Applications

Smartphones and tablets
Automotive infotainment and navigation systems
AI and edge computing devices
Industrial automation and IoT controllers
Consumer and wearable electronics

Technical Specifications

Parameter	Value
Density	8 Gb (1G × 8)
Data Rate	4266 Mbps
VDDQ	1.1V ± 0.06V
Channels	2 × 16-bit
Package	200-Ball FBGA
Dimension	10 × 10 × 0.8 mm
Temp Range	-40°C ~ +95°C
Functions	CA Training, Auto Refresh
Interface	LPDDR4X
Power Efficiency	Deep Sleep / Self Refresh

Request for Quotation

For real-time stock, pricing, and delivery information of K4F8E3S4HD-MGCL0JP, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our team will promptly offer the best quotation and support for BOM kitting, spot supply, and inventory management.