K4U8E3S4AD-MGCL0JP | Samsung LPDDR4X 8Gb Memory Chip | High-Speed, Low-Power Mobile and Embedded Memory

K4U8E3S4AD- MGCL0JP

8Gb low-power, high-speed LPDDR4X DRAM for mobile, IoT, and embedded applications.

Product Description

Product Overview

K4U8E3S4AD-MGCL0JP is an 8Gb LPDDR4X DRAM from Samsung Semiconductor, optimized for high performance and low power consumption. Operating at only 1.1V and supporting speeds up to 4266 Mbps, it delivers exceptional bandwidth and energy efficiency. With its 200-ball FBGA package, it ensures thermal reliability and compact integration, making it ideal for smartphones, tablets, automotive electronics, AI systems, and embedded IoT platforms.

Key Features

Compliant with JEDEC LPDDR4X standard
Data rates up to 4266 Mbps per pin
Low-voltage operation: V<sub>DDQ</sub> = 1.1V ± 0.06V
8-bank architecture for parallel access efficiency
Built-in CA training and command latency optimization
Auto-refresh and deep power-down modes for ultra-low power consumption
200-ball FBGA package for superior signal and thermal performance
Ideal for compact mobile and embedded designs

Applications

Smartphones and tablets
Automotive infotainment and navigation systems
Industrial automation and IoT controllers
AI edge computing and intelligent terminals
Smart wearables and consumer electronics

Technical Specifications

Parameter	Value
Density	8 Gb (1G × 8)
Data Rate	4266 Mbps
VDDQ	1.1V ± 0.06V
Package	200-Ball FBGA
Dimension	10 × 10 × 0.8 mm
Temp Range	-40°C ~ +95°C
Architecture	8 Bank
Functions	CA Training, Auto Refresh
Interface	LPDDR4X
Power Efficiency	Deep sleep / self-refresh mode

Request for Quotation

For real-time stock, pricing, and delivery information of K4U8E3S4AD-MGCL0JP, please include your Quantity (Qty), Required Lead Time, and Target Price in your RFQ. Our team will promptly provide the best quotation and support for BOM kitting, spot supply, and inventory management.