K4F8E304HB-MGCJ | Samsung LPDDR4 8Gb Memory Chip | High-Speed, Low-Power Mobile and Embedded Memory

K4F8E304HB- MGCJ

8Gb high-speed, low-power LPDDR4 DRAM optimized for mobile and embedded systems.

Product Description

Product Overview

K4F8E304HB-MGCJ is an 8Gb LPDDR4 DRAM from Samsung Semiconductor, built for high bandwidth and ultra-low power operation. Compliant with JEDEC LPDDR4 standards, it supports speeds up to 3733 Mbps at a 1.1V operating voltage. The 200-ball FBGA package ensures excellent signal integrity and compact integration, making it ideal for mobile devices, automotive systems, IoT controllers, and industrial embedded platforms.

Key Features

JEDEC-compliant LPDDR4 standard
Data rates up to 3733 Mbps per pin
Operates at 1.1V ± 0.06V for ultra-low power
Dual 16-bit channels for enhanced bandwidth
Built-in CA training and calibration mechanism
Supports self-refresh, deep power-down, and power management modes
Compact 200-ball FBGA package for reliable signal performance
Ideal for mobile and embedded memory applications

Applications

Smartphones and tablets
Automotive infotainment and navigation systems
Industrial control and IoT devices
AI computing and edge processing units
Wearable and consumer electronics

Technical Specifications

Parameter	Value
Density	8 Gb (1G × 8)
Data Rate	3733 Mbps
VDDQ	1.1V ± 0.06V
Channels	2 × 16-bit
Package	200-Ball FBGA
Dimension	10 × 10 × 0.8 mm
Temp Range	-40°C ~ +95°C
Functions	CA Training, Auto Refresh
Interface	LPDDR4
Power Efficiency	Self-refresh / Deep sleep

Request for Quotation

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