K4B1G1646I-BYMA | Samsung DDR3 SDRAM Memory Chip | Industrial-grade High-performance Memory

K4B1G1646I- BYMA

Low-power, high-performance DDR3 memory solution for industrial and embedded applications.

Product Description

Product Overview

K4B1G1646I-BYMA is a 1Gb DDR3 SDRAM from Samsung Semiconductor, designed for high bandwidth and low power applications. Operating at 1.5V with a data rate up to 1600 Mbps, it delivers excellent performance and reliability. The 78-Ball FBGA package ensures compact design and stable thermal characteristics, making it ideal for embedded systems, networking, automotive, and industrial applications that demand efficient memory performance.

Key Features

JEDEC-compliant DDR3 SDRAM
Data transfer rate up to 1600 Mbps (DDR3-1600)
1.5V ±0.075V operation for reduced power consumption
Built-in DLL for precise timing and synchronization
Supports auto-refresh, self-refresh, and power-down modes
Compact 78-Ball FBGA package for superior signal quality
Wide operating temperature range (-40°C to +95°C)
Long product lifecycle suitable for industrial environments

Applications

Industrial control systems and embedded mainboards
Automotive electronics and infotainment systems
Network communication devices and routers
Consumer electronics and display systems
Medical instruments and smart appliances

Technical Specifications

Parameter	Value
Density	1 Gb (128M × 8 / 64M × 16)
Data Rate	1600 Mbps
VDD	1.5V ±0.075V
Package	78-Ball FBGA
Dimension	9 × 7.8 × 1.2 mm
Temp Range	-40°C ~ +95°C
Timing	CL=11, tRCD=11, tRP=11
Functions	Auto/Self Refresh, DLL
Interface	SSTL_15
Application	Industrial, automotive, and embedded systems

Request for Quotation

For real-time stock, pricing, and delivery information of K4B1G1646I-BYMA, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our team will respond promptly with the best quotation and support for BOM kitting, spot supply, and inventory management.