K4AAG085WC-BCWE | Samsung DDR4 8Gb SDRAM Memory Chip | High-Performance, Low-Power Memory

K4AAG085WC- BCWE

High-performance 8Gb DDR4 memory chip designed for servers, networking, and industrial control applications.

Product Description

Product Overview

K4AAG085WC-BCWE is an 8Gb DDR4 SDRAM from Samsung Semiconductor, organized as 1G × 8. It supports data rates up to 3200 Mbps per pin while operating at just 1.2V, delivering exceptional performance with low power consumption. The 96-ball FBGA package ensures robust signal integrity and thermal stability, making it ideal for servers, networking systems, and industrial embedded platforms requiring long-term reliability.

Key Features

JEDEC-compliant DDR4 SDRAM standard
Supports DDR4-3200 data rate (3200 Mbps per pin)
Operates at low voltage 1.2 V ± 0.06 V
8-bank architecture for optimized data access
Integrated DLL for precise timing and synchronization
Auto-refresh, self-refresh, and deep power-down support
96-ball FBGA package for enhanced signal integrity
Wide temperature range (-40 °C to +95 °C) for industrial-grade use

Applications

Server and data center memory modules
Networking and routing equipment
Industrial automation and embedded systems
Automotive infotainment and AI control units
Consumer electronics and high-end display devices

Technical Specifications

Parameter	Value
Density	8 Gb (1G × 8)
Data Rate	3200 Mbps
VDD	1.2 V ± 0.06 V
Package	96-Ball FBGA
Dimension	9 × 8 × 1.2 mm
Temp Range	-40 °C ~ +95 °C
Timing	CL = 22 @ 3200 Mbps
Functions	DLL, Auto/Self Refresh
Interface	SSTL_12
Architecture	8 Bank

Request for Quotation

For real-time stock, pricing, and lead time of K4AAG085WC-BCWE, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our team will promptly offer the best quotation and support for BOM kitting, spot supply, and inventory management.