K4A4G165WG-BCWE | Samsung DDR4 4Gb ×16 SDRAM Memory Chip

K4A4G165WG- BCWE

High-performance 4Gb DDR4 memory chip for servers, embedded, and industrial control systems.

Product Description

Product Overview

K4A4G165WG-BCWE is a 4Gb DDR4 SDRAM from Samsung Semiconductor, organized as 256M × 16, delivering data rates up to 3200 Mbps per pin. Operating at 1.2 V, it provides excellent power efficiency and timing precision. The 96-ball FBGA package ensures compact layout, thermal stability, and long-term reliability—ideal for servers, networking equipment, industrial automation, and automotive electronics.

Key Features

JEDEC-compliant DDR4 SDRAM standard
Supports data rates up to 3200 Mbps (DDR4-3200)
Low-voltage operation (1.2 V ± 0.06 V) for energy efficiency
16-bit data width for higher bandwidth per chip
Integrated DLL for precise timing synchronization
Auto-refresh, self-refresh, and power-saving modes supported
Wide operating temperature (-40 °C to +95 °C) for industrial and automotive use
96-ball FBGA package ensures superior signal integrity

Applications

Servers and storage systems
Networking and routing equipment
Industrial control and automation systems
Automotive infotainment and electronic control units
Embedded platforms and consumer electronics

Technical Specifications

Parameter	Value
Density	4 Gb (256M × 16)
Data Rate	3200 Mbps
VDD	1.2 V ± 0.06 V
Package	96-Ball FBGA
Dimension	9 × 8 × 1.2 mm
Temp Range	-40 °C ~ +95 °C
Timing	CL = 22 @ 3200 Mbps
Data Width	×16
Functions	DLL, Auto/Self Refresh
Interface	SSTL_12

Request for Quotation

For real-time stock, pricing, and lead-time information of K4A4G165WG-BCWE, please include your Quantity (Qty), Required Lead Time, and Target Price in your RFQ. Our team will promptly offer the best quotation with BOM kitting, spot supply, and inventory management support.