K4A4G085WE-BCRC | Samsung DDR4 4Gb SDRAM Memory Chip

K4A4G085WE- BCRC

High-bandwidth, low-power DDR4 memory solution for high-performance and embedded applications.

Product Description

Product Overview

K4A4G085WE-BCRC is a 4Gb DDR4 SDRAM from Samsung Semiconductor, organized as 512M × 8, delivering speeds up to 2400 Mbps. Operating at just 1.2V, it offers improved bandwidth and lower power consumption compared with DDR3. The compact 96-Ball FBGA package ensures stable operation and thermal efficiency, making it an ideal solution for high-performance computing, networking, automotive, and embedded systems.

Key Features

JEDEC-compliant DDR4 SDRAM standard
Supports DDR4-2400 data rate (2400 Mbps/pin)
Operates at low voltage 1.2V ±0.06V
Built-in DLL for precise timing and synchronization
8-bank architecture for efficient parallel access
Auto-refresh and self-refresh supported
96-ball FBGA package ensures signal integrity
Wide temperature range (-40°C to +95°C) for industrial-grade use
Compatible with major CPU and controller platforms

Applications

High-performance computing and server platforms
Networking and routing equipment
Industrial control and automation systems
Automotive electronics and infotainment systems
Embedded mainboards and consumer electronics

Technical Specifications

Parameter	Value
Density	4 Gb (512M × 8)
Data Rate	2400 Mbps
VDD	1.2V ±0.06V
Package	96-Ball FBGA
Dimension	9 × 8 × 1.2 mm
Operating Temp	-40°C ~ +95°C
Timing	CL=17, tRCD=17, tRP=17
Functions	Auto/Self Refresh, DLL
Interface	SSTL_12
Architecture	8 Bank

Request for Quotation

For real-time stock, pricing, and delivery information of K4A4G085WE-BCRC, please include your Quantity (Qty), Required Lead Time, and Target Price in the RFQ. Our team will respond promptly with the best quotation and support for BOM kitting, spot supply, and inventory management.